Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs

Author

Chini, A. ; Buttari, D. ; Coffie, R. ; Shen, L. ; Palacios, T. ; Heikman, S. ; Chakraborty, Arpan ; Keller, S. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

33

Abstract

GaN-based HEMTs are the most promising device in order to meet the requirements of new generation communication systems. In this work, devices with planar (unrecessed) and gate recessed structures have been fabricated on the same wafer, and characterized by means of RF two-tone measurements at 10 GHz. For GaAs-based devices, increasing device transconductance by means of gate recessing proved to be very effective, resulting in an overall improvement of both large and small signal performance, especially their linearity characteristics. Further optimization of gate recessing may result in higher efficiency operation while maintaining low distortion level.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; linearisation techniques; microwave field effect transistors; wide band gap semiconductors; 10 GHz; AlGaN-GaN; HEMT linearity characteristics; RF two-tone measurements; device transconductance; gate recessed structures; gate recessing effects; planar structures; Aluminum gallium nitride; Etching; Gallium nitride; HEMTs; Linearity; MODFETs; Power generation; Radio frequency; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367770

Filename

1367770