Influence of the heterostructure design on noise figure of AlGaN/GaN HEMTs

Author

Sanabria, Christopher ; Xu, Hongtao ; Palacios, Tomás ; Chakraborty, Arpan ; Heikman, Sten ; Mishra, Umesh K. ; York, Robert A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

43

Abstract

In this work, we cover four topics. Three studies are presented on the effect of different epilayer structures on the noise figure of AlGaN/GaN HEMTs in the 4-12 GHz frequency range. The material studies include varying aluminum composition in the barrier, sapphire vs. SiC substrates, and, for the first time, the influence of a thin AlN layer on the noise parameters; all three against frequency and drain current. In addition is a comparison of two equivalent circuit models at 5 GHz.

Keywords

III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; semiconductor heterojunctions; wide band gap semiconductors; 4 to 12 GHz; 5 GHz; AlGaN-GaN; AlN; HEMT heterostructure design; SiC substrates; barrier aluminum composition; drain current; epilayer structures; equivalent circuit models; frequency response; noise figure; sapphire substrates; Acoustical engineering; Aluminum gallium nitride; Circuit noise; Composite materials; Frequency; Gallium nitride; HEMTs; MODFETs; Noise figure; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367775

Filename

1367775