• DocumentCode
    2102684
  • Title

    10 kV, 123 mΩ-cm2 4H-SiC power DMOSFETs

  • Author

    Sei-Hying Ryu ; Krishnaswami, Sumi ; O´Loughlin, Michael ; Richmond, James ; Agarwal, Abhishek ; Palmour, John ; Heffier, A.R.

  • Author_Institution
    Cree, Inc., Durham, NC, USA
  • fYear
    2004
  • fDate
    21-23 June 2004
  • Firstpage
    47
  • Abstract
    Power MOSFETs in 4H-SiC are very attractive for high voltage switching applications because of their low specific on-resistances and fast, temperature independent switching characteristics. We present our latest results in 10 kV 4H-SiC DMOSFET development - a specific on-resistance of 123 mΩ·cm2 is demonstrated, which is a 42% reduction in specific on-resistance. This is the lowest specific on-resistance value ever reported for 10 kV class majority carrier switches.
  • Keywords
    field effect transistor switches; power MOSFET; power semiconductor switches; silicon compounds; wide band gap semiconductors; 10 kV; 4H-SiC power DMOSFET; SiC; high voltage switching; low specific on-resistance; majority carrier switches; temperature independent switching characteristics; Iron; MOSFET circuits; Materials science and technology; Photonic band gap; Power transistors; Silicon carbide; Testing; Voltage; World Wide Web;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-8284-6
  • Type

    conf

  • DOI
    10.1109/DRC.2004.1367777
  • Filename
    1367777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2102684