Title :
Direct measurements of the AC performance of carbon nanotube field effect transistors
Author :
Singh, D.V. ; Jenkins, K.A.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Carbon nanotube field-effect transistors are expected to operate at very high frequencies, possibly in the THz regime, making them attractive for future nanoelectronics technologies. However, due to formidable measurement difficulties, this performance has not yet been demonstrated. This paper reports: 1) the first direct observation of CNFETs operating at several hundred MHz; and 2) illustrates how to extend direct frequency response measurements to the GHz regime.
Keywords :
S-parameters; electric current measurement; field effect transistors; frequency measurement; frequency response; nanotube devices; power measurement; semiconductor device measurement; C; CNFET direct performance observation; S-parameter measurement; carbon nanotube field effect transistors; current measurement; frequency response measurements; nanoelectronics; power measurement; CNTFETs; Capacitance measurement; Character generation; Crosstalk; Current measurement; Frequency measurement; Frequency response; Noise measurement; Parasitic capacitance; Scattering parameters;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367779