Surface acoustic wave propagation properties of 3C-SiC epitaxial films on Si(100)

Author

Jin Yong Kim ; Hoon Joo Na ; Hyeong Joon Kim

Author_Institution

Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea

Volume

1

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

273

Abstract

3C-SiC epitaxial films on Si(100) were successfully grown by MOCVD using BTMSM source. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. Using ZnO piezoelectric thin films, the SAW propagation properties of 3C-SiC thin films on Si(100) have been experimentally and theoretically investigated. The hard 3C-SiC thin films stiffened the Si substrate so that the velocities of fundamental and 1^st modes increased up to 5,100 m/s and 9,140 m/s, respectively.

Keywords

MOCVD; Rayleigh waves; acoustic wave propagation; semiconductor thin films; silicon compounds; stacking faults; surface acoustic wave filters; surface acoustic waves; 3C-SiC epitaxial films; BTMSM source; MOCVD; SAW filter; Sezawa mode; Si; Si(100) substrates; SiC; piezoelectric thin films; stacking faults; surface acoustic wave propagation; Acoustic propagation; Acoustic waves; Frequency; Piezoelectric films; SAW filters; Semiconductor thin films; Substrates; Surface acoustic wave devices; Surface acoustic waves; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE

Conference_Location

Caesars Tahoe, NV

ISSN

1051-0117

Print_ISBN

0-7803-5722-1

Type

conf

DOI

10.1109/ULTSYM.1999.849401

Filename

849401