Surface acoustic wave propagation properties of 3C-SiC epitaxial films on Si(100)

3C-SiC epitaxial films on Si(100) were successfully grown by MOCVD using BTMSM source. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. Using ZnO piezoelectric thin films, the SAW propagation properties of 3C-SiC thin films on Si(100) have been experimentally and theoretically investigated. The hard 3C-SiC thin films stiffened the Si substrate so that the velocities of fundamental and 1^st modes increased up to 5,100 m/s and 9,140 m/s, respectively.