Title :
Very highly efficient surface acoustic wave convolver using GaSb/InSb/AlGaAsSb heterostructures grown on LiNbO/sub 3/ substrates
Author :
Kuze, Naomi ; Goto, Hiromi ; Kanno, Y. ; Tsunashima, M. ; Yamagata, Yoshiki ; Yamanouchi, Kazuhiko
Author_Institution :
Asahi Chem. Ind. Co. Ltd., Shizuoka, Japan
Abstract :
Highly efficient surface acoustic wave (SAW) convolvers are required for application in spread spectrum communication systems. We present here for the first time the growth of GaSb/InSb/AlGaAsSb heterostructures on LiNbO3 substrates by molecular beam epitaxy (MBE) and their application to a novel strip-coupled SAW convolver. As a result of investigating the semiconductor thin film structure and the output electrode structure, we have succeeded in obtaining very high efficiencies of more than -14 dBm (F-value). We have also studied the correlation properties of the strip-coupled SAW convolver using a square wave signal and a pseudonoise (PN) code signal.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; lithium compounds; molecular beam epitaxial growth; pseudonoise codes; semiconductor epitaxial layers; semiconductor growth; spread spectrum communication; surface acoustic wave convolution; GaSb-InSb-AlGaAsSb; LiNbO3; LiNbO3 substrates; MBE; heterostructures; output electrode structure; pseudonoise code signal; semiconductor thin film; spread spectrum communication systems; square wave signal; surface acoustic wave convolver; Acoustic waves; Convolvers; Electrodes; Electron mobility; Gas insulation; Molecular beam epitaxial growth; Semiconductor films; Strips; Substrates; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE
Conference_Location :
Caesars Tahoe, NV
Print_ISBN :
0-7803-5722-1
DOI :
10.1109/ULTSYM.1999.849402
