Very highly efficient surface acoustic wave convolver using GaSb/InSb/AlGaAsSb heterostructures grown on LiNbO/sub 3/ substrates

Author

Kuze, Naomi ; Goto, Hiromi ; Kanno, Y. ; Tsunashima, M. ; Yamagata, Yoshiki ; Yamanouchi, Kazuhiko

Author_Institution

Asahi Chem. Ind. Co. Ltd., Shizuoka, Japan

Volume

1

fYear

1999

fDate

17-20 Oct. 1999

Firstpage

277

Abstract

Highly efficient surface acoustic wave (SAW) convolvers are required for application in spread spectrum communication systems. We present here for the first time the growth of GaSb/InSb/AlGaAsSb heterostructures on LiNbO₃ substrates by molecular beam epitaxy (MBE) and their application to a novel strip-coupled SAW convolver. As a result of investigating the semiconductor thin film structure and the output electrode structure, we have succeeded in obtaining very high efficiencies of more than -14 dBm (F-value). We have also studied the correlation properties of the strip-coupled SAW convolver using a square wave signal and a pseudonoise (PN) code signal.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; lithium compounds; molecular beam epitaxial growth; pseudonoise codes; semiconductor epitaxial layers; semiconductor growth; spread spectrum communication; surface acoustic wave convolution; GaSb-InSb-AlGaAsSb; LiNbO₃; LiNbO₃ substrates; MBE; heterostructures; output electrode structure; pseudonoise code signal; semiconductor thin film; spread spectrum communication systems; square wave signal; surface acoustic wave convolver; Acoustic waves; Convolvers; Electrodes; Electron mobility; Gas insulation; Molecular beam epitaxial growth; Semiconductor films; Strips; Substrates; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE

Conference_Location

Caesars Tahoe, NV

ISSN

1051-0117

Print_ISBN

0-7803-5722-1

Type

conf

DOI

10.1109/ULTSYM.1999.849402

Filename

849402