Title :
Resistive interconnection localization
Author :
Cole, Edward I., Jr. ; Tangyunyong, Paiboon ; Hawkins, Charles F. ; Bruce, Michael R. ; Bruce, Victoria J. ; Ring, Rosalinda M. ; Chong, Wan-Loong
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
Resistive interconnection localization (RIL) is a new scanning laser microscope analysis technique that directly and rapidly localizes defective IC vias, contacts, and conductors from the front side and backside. RIL uses a scanned laser to produce localized thermal gradients in IC interconnections during functional testing. A change in the pass/fail state with localized heating of the IC identifies the failing site. The technique reduces the time to locate a resistive via from months to minutes. The sources of defective vias, the physics of RIL signal generation, and examples of RIL analysis are presented.
Keywords :
failure analysis; fault location; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; laser beam applications; optical microscopy; process heating; temperature distribution; IC interconnections; RIL analysis; RIL signal generation physics; defective IC conductors; defective IC contacts; defective IC vias; defective via sources; failing site identification; functional testing; localized heating; localized thermal gradients; pass/fail state; resistive interconnection localization; resistive via location; scanning laser microscope analysis technique; wafer backside analysis; wafer front side analysis; Chemical analysis; Conductors; Contacts; Failure analysis; Heating; Laser theory; Optical imaging; Optical microscopy; Physics; Testing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025604
