• DocumentCode
    2102899
  • Title

    Fabrication process for semiconductor bonded SAW devices

  • Author

    Hohakawa, K. ; Koh, K. ; Kaneshiro, C. ; Aoki, Yuya ; Hong, Chuan ; Komine, Kazuteru

  • Author_Institution
    Kanagawa Inst. of Technol., Japan
  • Volume
    1
  • fYear
    1999
  • fDate
    17-20 Oct. 1999
  • Firstpage
    301
  • Abstract
    This paper reports improved fabrication processes on SAW-semiconductor coupled devices using epitaxial lift off (ELO) and film bonding technology. In order to realize a rugged bonding interface between the semiconductor film and LiNbO3, we studied (1) enhancement of release etching, (2) surface treatment of the film and substrate to realize a hydrophilic surface, (3) co-integration with polyimide film. We also report film transfer technology using polyimide and basic experimental results on SAW-semiconductor coupled test devices.
  • Keywords
    etching; semiconductor thin films; surface acoustic wave devices; epitaxial lift off; fabrication processes; film bonding technology; hydrophilic surface; polyimide film; release etching; rugged bonding interface; semiconductor bonded SAW devices; surface treatment; Bonding; Etching; Fabrication; Hafnium; Piezoelectric films; Polyimides; Semiconductor films; Substrates; Surface acoustic wave devices; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1999. Proceedings. 1999 IEEE
  • Conference_Location
    Caesars Tahoe, NV
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-5722-1
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1999.849406
  • Filename
    849406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2102899