• DocumentCode
    2102903
  • Title

    A new two-step recess technology using SiNx passivation and Pt-buried gate process and its application to 0.15 μm Al0.6InAs/In0.65GaAs HEMTs

  • Author

    Kim, Dae-Hyun ; Lee, Kang-Min ; Lee, Jae.-Hak. ; Seo, Kwang-Seok

  • Author_Institution
    Sch. of EECS, Seoul Nat. Univ., South Korea
  • fYear
    2004
  • fDate
    21-23 June 2004
  • Firstpage
    69
  • Abstract
    A new two-step recess (TSR) technology was successfully demonstrated using SiNx passivation and Pt-buried gate process. Applying the developed two-step recess (TSR) process to the fabrication of 0.15 μm Al0.6InAs/In0.65GaAs HEMTs, remarkable improvements could be obtained such as the suppression of the kink effect, and the increase of Gm,max, fT and fmax. Since the side-recessed region was fully passivated by SiNx dielectric layer, this TSR technology is also to offer additional advantage of good reliability.
  • Keywords
    III-V semiconductors; aluminium compounds; buried layers; gallium arsenide; high electron mobility transistors; indium compounds; passivation; platinum; semiconductor device measurement; semiconductor device reliability; silicon compounds; 0.15 micron; Al0.6InAs-In0.65GaAs; Al0.6InAs/In0.65GaAs HEMT; Pt-buried gate process; SiNx dielectric layer; SiNx passivation; TSR technology; fully passivated side-recessed region; kink effect suppression; reliability; two-step recess technology; Annealing; Gallium arsenide; HEMTs; Intrusion detection; MODFETs; Passivation; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
  • ISSN
    1548-3770
  • Print_ISBN
    0-7803-8284-6
  • Type

    conf

  • DOI
    10.1109/DRC.2004.1367787
  • Filename
    1367787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2102903