DocumentCode :
2102905
Title :
Impact ionization of sub-micron InP structures
Author :
Tan, L.J.J. ; Ng, J.S. ; Tan, C.H. ; David, J.P.R.
Author_Institution :
Univ. of Sheffield, Sheffield
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
515
Lastpage :
516
Abstract :
In this work, InP ionization coefficients and threshold energies of electrons and holes were deduced from Me, Fe, Mh and Fh measured on a series of InP diodes.
Keywords :
III-V semiconductors; impact ionisation; indium compounds; semiconductor diodes; InP; InP diodes; InP ionization coefficients; impact ionization; sub-micron InP structures; threshold energies; Bandwidth; Charge carrier processes; Diodes; Impact ionization; Indium gallium arsenide; Indium phosphide; Iron; Noise figure; Space technology; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382506
Filename :
4382506
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2102905
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