• DocumentCode
    2102905
  • Title

    Impact ionization of sub-micron InP structures

  • Author

    Tan, L.J.J. ; Ng, J.S. ; Tan, C.H. ; David, J.P.R.

  • Author_Institution
    Univ. of Sheffield, Sheffield
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    515
  • Lastpage
    516
  • Abstract
    In this work, InP ionization coefficients and threshold energies of electrons and holes were deduced from Me, Fe, Mh and Fh measured on a series of InP diodes.
  • Keywords
    III-V semiconductors; impact ionisation; indium compounds; semiconductor diodes; InP; InP diodes; InP ionization coefficients; impact ionization; sub-micron InP structures; threshold energies; Bandwidth; Charge carrier processes; Diodes; Impact ionization; Indium gallium arsenide; Indium phosphide; Iron; Noise figure; Space technology; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382506
  • Filename
    4382506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2102905