• DocumentCode
    2102924
  • Title

    4H-SiC PIN Recessed Window Avalanche Photodiode

  • Author

    Liu, Han-Din ; Mcintosh, Dion ; Bai, Xiaogang ; Pan, Huapu ; Liu, Mingguo ; Campbell, Joe C.

  • Author_Institution
    Univ. of Virginia, Charlottesville
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    517
  • Lastpage
    518
  • Abstract
    We report 4H-SiC p-i-n recessed window avalanche photodiodes with low dark current and high quantum efficiency. For a circular device of 250 mum diameter, the device demonstrated a responsivity of ~135.5 mW/A (external quantum efficiency = ~64%), a dark current ~90 pA (~0.183 mum/cm2) at a photocurrent gain of 1000, and an excess noise factor k of slightly less than 0.1.
  • Keywords
    avalanche photodiodes; silicon compounds; wide band gap semiconductors; PIN recessed window avalanche photodiode; photocurrent; Avalanche photodiodes; Biomedical optical imaging; Coatings; Dark current; Optical noise; Passivation; Photoconductivity; Photonic band gap; Quantum computing; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382507
  • Filename
    4382507
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2102924