A new observation in hot-carrier induced drain current degradation in deep-sub-micrometer nMOSFETs

Author

Chen, Jone F. ; Tsao, Chih-Pin

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2002

fDate

2002

Firstpage

31

Lastpage

34

Abstract

Hot-carrier induced drain current degradation in 0.18 μm nMOSFETs is investigated. Results show that drain current characterized at drain voltage higher than 0.1 V exhibits the most degradation. This new observation is attributed to two competing mechanisms as the characterization drain voltage increases: reduction in channel inversion charges, and reduction in charged interface states. The characteristic of drain current degradation vs. characterization drain voltage is flatter when the device is stressed under high temperature and forward body-bias.

Keywords

MOSFET; hot carriers; interface states; inversion layers; semiconductor device reliability; thermal stresses; 0.18 micron; channel inversion charges; charged interface states; deep-sub-micrometer nMOSFETs; drain voltage; forward body-bias; high temperature stress; hot-carrier induced drain current degradation; hot-carrier reliability; CMOS process; Degradation; Hot carriers; Interface states; MOSFETs; Microelectronics; Monitoring; Stress; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the

Print_ISBN

0-7803-7416-9

Type

conf

DOI

10.1109/IPFA.2002.1025607

Filename

1025607