DocumentCode
2102987
Title
Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications
Author
Jha, Neeraj K. ; Baghini, Maryam Shojaei ; Rao, V. Ramgopal
Author_Institution
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
fYear
2002
fDate
2002
Firstpage
35
Lastpage
39
Abstract
The effect of channel hot carrier (CHC) stress under typical analog operating conditions is studied for the first time for single halo (SH) p-MOSFET devices. The SH devices show less degradation under identical operating conditions compared to conventional MOSFETs. The effect of SH implant parameters on device degradation is presented.
Keywords
MOSFET; hot carriers; ion implantation; semiconductor device reliability; thermal stresses; analog applications; channel hot carrier stress; device degradation; implant parameters; operating conditions; reliability; single halo deep sub-micron p-MOSFETs; CMOS analog integrated circuits; CMOS technology; Degradation; Hot carriers; Implants; MOS devices; MOSFET circuits; Occupational stress; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN
0-7803-7416-9
Type
conf
DOI
10.1109/IPFA.2002.1025608
Filename
1025608
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