Title :
Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications
Author :
Jha, Neeraj K. ; Baghini, Maryam Shojaei ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Abstract :
The effect of channel hot carrier (CHC) stress under typical analog operating conditions is studied for the first time for single halo (SH) p-MOSFET devices. The SH devices show less degradation under identical operating conditions compared to conventional MOSFETs. The effect of SH implant parameters on device degradation is presented.
Keywords :
MOSFET; hot carriers; ion implantation; semiconductor device reliability; thermal stresses; analog applications; channel hot carrier stress; device degradation; implant parameters; operating conditions; reliability; single halo deep sub-micron p-MOSFETs; CMOS analog integrated circuits; CMOS technology; Degradation; Hot carriers; Implants; MOS devices; MOSFET circuits; Occupational stress; Transconductance; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025608
