A novel program-erasable capacitor using high-κ AlN dielectric

Author

Lai, C.H. ; Ma, M.W. ; Cheng, C.F. ; Chin, Albert ; McAlister, S.P. ; Zhu, C.X. ; Li, M.-F. ; Kwong, D.L.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2004

fDate

21-23 June 2004

Firstpage

77

Abstract

We demonstrate, for the first time, a novel high-κ AlN capacitor that can be program-erasable at voltages of ±4 V and that has good retention for 1T1C memory. These features are not shown by Al₂O₃, or other known single high-κ layer capacitors. Good data retention occurs with a threshold change of only 0.06 after ±4 V P/E for 10⁴s and shows potentially long memory time.

Keywords

DRAM chips; aluminium compounds; dielectric thin films; integrated circuit measurement; integrated circuit reliability; permittivity; thin film capacitors; 10000 s; 4 V; Al₂O₃; AlN; AlN capacitor; DRAM technology; data retention; high-κ AlN dielectric; memory retention; memory time; program-erasable capacitor; single high-K layer capacitors; threshold change; Capacitance-voltage characteristics; Capacitors; Charge carrier processes; Dielectrics; Electron traps; MONOS devices; Nonvolatile memory; Phase change materials; Random access memory; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367791

Filename

1367791