Title :
2V BiCMOS downconverter and upconverter chips for 1.8-5GHz band wireless communications networks
Author :
Madihian, M. ; Bak, E ; Imai, K. ; Yoshida, H. ; Kinoshita, Y. ; Yamazaki, T.
Author_Institution :
Network Research Laboratory, C&C Research Laboratories, NEC Corporation 4-1-1, Miyazaki, Miyamae-ku, Kawasaki 216 Japan
Abstract :
This paper concerns with the design considerations and performance results for BiCMOS down-converter and upconverter modules developed for mobile and personal communications applications. Each module, which integrates a bipolar RF amplifier, a BiCMOS simplified Gilbert mixer, and an NMOS IF amplifier on a single chip, is designed to operate at 2V over 1.8-5.4GHz frequency band with a maximum conversion gain higher than 34dB. Power dissipation for the downconverter and upconverter modules is, 18mW and 24mW, respectively, and chip size for both modules is 1.0mm × 0.7mm.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Laboratories; MOS devices; MOSFETs; Mixers; Radio frequency; Radiofrequency amplifiers; Voltage; Wireless communication;
Conference_Titel :
Microwave Conference, 1995. 25th European
Conference_Location :
Bologna, Italy
DOI :
10.1109/EUMA.1995.336920
