• DocumentCode
    2103091
  • Title

    Optoelectronics of Single Carbon Nanotubes

  • Author

    Avouris, Phaedon

  • Author_Institution
    IBM T.J. Watson Res. Center, Yorktown Heights
  • fYear
    2007
  • fDate
    21-25 Oct. 2007
  • Firstpage
    529
  • Lastpage
    530
  • Abstract
    CNTs are one-dimensional materials with unique properties that make them ideal for applications in nanoelectronics and optoelectronics. Particularly strong emphasis has been placed on carbon nanotube field-effect transistors (CNTFETs). In these devices a semiconducting, single-walled, nanotube molecule replaces silicon as the transistor "channel." CNTFETs with thick gate dielectrics tend to be unipolar p-type devices. Upon scaling of the oxide thickness, however, the Schottky barriers present at both source and drain are screened by the gate and become sufficiently thin to allow the simultaneous injection of electrons and holes from opposite ends of the CNT channel, i.e. the transistor becomes ambipolar (a-CNTFET).
  • Keywords
    carbon nanotubes; field effect transistors; optoelectronic devices; CNTFET; Schottky barriers; carbon nanotube field-effect transistors; optoelectronics; CNTFETs; Carbon nanotubes; Dielectric devices; Dielectric materials; Nanoelectronics; Nanoscale devices; Schottky barriers; Semiconductivity; Semiconductor materials; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
  • Conference_Location
    Lake Buena Vista, FL
  • ISSN
    1092-8081
  • Print_ISBN
    978-1-4244-0925-9
  • Electronic_ISBN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/LEOS.2007.4382513
  • Filename
    4382513