DocumentCode :
2103091
Title :
Optoelectronics of Single Carbon Nanotubes
Author :
Avouris, Phaedon
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights
fYear :
2007
fDate :
21-25 Oct. 2007
Firstpage :
529
Lastpage :
530
Abstract :
CNTs are one-dimensional materials with unique properties that make them ideal for applications in nanoelectronics and optoelectronics. Particularly strong emphasis has been placed on carbon nanotube field-effect transistors (CNTFETs). In these devices a semiconducting, single-walled, nanotube molecule replaces silicon as the transistor "channel." CNTFETs with thick gate dielectrics tend to be unipolar p-type devices. Upon scaling of the oxide thickness, however, the Schottky barriers present at both source and drain are screened by the gate and become sufficiently thin to allow the simultaneous injection of electrons and holes from opposite ends of the CNT channel, i.e. the transistor becomes ambipolar (a-CNTFET).
Keywords :
carbon nanotubes; field effect transistors; optoelectronic devices; CNTFET; Schottky barriers; carbon nanotube field-effect transistors; optoelectronics; CNTFETs; Carbon nanotubes; Dielectric devices; Dielectric materials; Nanoelectronics; Nanoscale devices; Schottky barriers; Semiconductivity; Semiconductor materials; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
ISSN :
1092-8081
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
Type :
conf
DOI :
10.1109/LEOS.2007.4382513
Filename :
4382513
Link To Document :
بازگشت