DocumentCode
2103091
Title
Optoelectronics of Single Carbon Nanotubes
Author
Avouris, Phaedon
Author_Institution
IBM T.J. Watson Res. Center, Yorktown Heights
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
529
Lastpage
530
Abstract
CNTs are one-dimensional materials with unique properties that make them ideal for applications in nanoelectronics and optoelectronics. Particularly strong emphasis has been placed on carbon nanotube field-effect transistors (CNTFETs). In these devices a semiconducting, single-walled, nanotube molecule replaces silicon as the transistor "channel." CNTFETs with thick gate dielectrics tend to be unipolar p-type devices. Upon scaling of the oxide thickness, however, the Schottky barriers present at both source and drain are screened by the gate and become sufficiently thin to allow the simultaneous injection of electrons and holes from opposite ends of the CNT channel, i.e. the transistor becomes ambipolar (a-CNTFET).
Keywords
carbon nanotubes; field effect transistors; optoelectronic devices; CNTFET; Schottky barriers; carbon nanotube field-effect transistors; optoelectronics; CNTFETs; Carbon nanotubes; Dielectric devices; Dielectric materials; Nanoelectronics; Nanoscale devices; Schottky barriers; Semiconductivity; Semiconductor materials; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382513
Filename
4382513
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