DocumentCode
2103158
Title
Subsurface Imaging of Integrated Circuits with Widefield and Confocal Microscopy Using Numerical Aperture Increasing Lens
Author
Köklü, F. Hakan ; Vamivakas, A.N. ; Quesnel, J.I. ; Ippolito, S.B. ; Goldberg, B.B. ; Ünlü, M.S.
Author_Institution
Boston Univ., Boston
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
535
Lastpage
536
Abstract
We report a lateral spatial resolution of 0.37 mum with a custom infrared widefield microscope while imaging subsurface features in silicon integrated circuits from backside. In addition, 2.65 mum apart polysilicon and metal layers can be differentiated.
Keywords
elemental semiconductors; monolithic integrated circuits; optical microscopy; silicon; Subsurface Imaging; confocal microscopy; infrared widefield microscope; lens; metal layers; numerical aperture; silicon integrated circuits; spatial resolution; Apertures; Cellular neural networks; Focusing; Image resolution; Infrared imaging; Lenses; Nails; Optical fibers; Optical imaging; Optical microscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0925-9
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382516
Filename
4382516
Link To Document