Title :
A study of interaction between electrostatic discharge and hot carrier effect and its effect on protection circuit reliability
Author :
Manna, I. ; Tan, P.-Y. ; Tan, Y.-C. ; Lo, K.-F.
Author_Institution :
Chartered Semicond. Manuf. Co., Singapore
Abstract :
Studied the effect of non-destructive ESD events on hot carrier degradation parameters in an advanced deep submicron technology. Also investigated are two ESD protection strategies (substrate-biased NMOS and source injection technique) and they are shown to have unequal performance from the standpoint of hot-carrier reliability after ESD pre-stress.
Keywords :
MOS integrated circuits; VLSI; electrostatic discharge; hot carriers; integrated circuit reliability; integrated circuit testing; protection; deep submicron technology; electrostatic discharge; hot carrier degradation parameters; hot carrier effect; hot-carrier reliability; nondestructive ESD events; pre-stress; protection circuit reliability; protection strategies; source injection technique; substrate-biased NMOS; Acceleration; Degradation; Electrostatic discharge; Hot carrier effects; Hot carriers; MOS devices; MOSFETs; Protection; Stress; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025616
