Title :
Study of optical properties of CuInSe2 thin film
Author :
Bhuiyan, Mohammad Arif Sobhan ; Mahmood, Zahid Hasan
Author_Institution :
Dept. of Appl. Phys., Electron. & Commun. Eng., Univ. of Chittagong, Chittagong
Abstract :
CuInSe2 is a direct band gap I-III-VI ternary solar semiconductor material. The CuInSe2 thin films for this study were prepared by co-evaporation technique from their elements on glass substrate maintained at temperatures between 200degC and 500degC in a conventional diffusion pump vacuum chamber at pressures of about 10-5 torr at the Photovoltaic Laboratory of New Castle Upon Tyne Polytechnique, U.K. Shimadzu UV spectrophotometer (model 1201) was used to investigate optical parameters of these films within 350-1100 nm range. Transmittance, reflectance and absorptance of these films were recorded. The absorption co-efficient and the band gap of these films were calculated from these data.
Keywords :
absorption coefficients; copper compounds; energy gap; indium compounds; reflectivity; semiconductor thin films; ternary semiconductors; ultraviolet spectra; CuInSe2; I-III-VI ternary semiconductor material; SiO2; absorptance; absorption coefficient; band gap; co-evaporation technique; direct band gap semiconductor material; glass substrate; optical parameters; reflectance; solar semiconductor material; temperature 200 degC to 500 degC; thin films; transmittance; wavelength 350 nm to 1100 nm; Glass; Optical films; Optical pumping; Photonic band gap; Photovoltaic systems; Semiconductor materials; Semiconductor thin films; Substrates; Temperature; Vacuum technology;
Conference_Titel :
Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on
Conference_Location :
Varanasi
Print_ISBN :
978-0-230-63718-4
