Parametric modelling of linear time invariant S-parameter devices in the Laplace domain

Author

Rolain, Y. ; Vandersteen, Gerd ; Schreurs, Dominique ; Van den Bosch, S.

Author_Institution

Dept. ELEC/TW, Vrije Univ., Brussels, Belgium

Volume

2

fYear

1996

fDate

1996

Firstpage

1244

Abstract

A statistically founded estimator for scattering parameter matrices of linear time-invariant systems is proposed. The estimator is applied to real-world High Electron Mobility Transistor (HEMT) measurements performed on a wafer probing station between 0.5 and 50 GHz. The obtained results outperform the standard white-box models

Keywords

S-matrix theory; S-parameters; high electron mobility transistors; parameter estimation; semiconductor device models; statistical analysis; white noise; 0.5 to 50 GHz; HEMT; InP; Laplace domain; black box model; linear time invariant S-parameter devices; parametric modelling; real-world High Electron Mobility Transistor; scattering parameter matrices; standard white-box models; statistically founded estimator; wafer probing station; Extrapolation; Frequency estimation; Frequency measurement; HEMTs; Maximum likelihood estimation; Parameter estimation; Parametric statistics; Polynomials; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 1996. IMTC-96. Conference Proceedings. Quality Measurements: The Indispensable Bridge between Theory and Reality., IEEE

Conference_Location

Brussels

Print_ISBN

0-7803-3312-8

Type

conf

DOI

10.1109/IMTC.1996.507570

Filename

507570