Title :
Polymeric substrate microcrystalline-silicon strain sensor
Author :
Zhou, Lisong ; Jackson, Tom
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Metallic foil and semiconductor piezoresistors are frequently used as strain sensors in shape or strain monitoring applications. The sensors are typically connected in a Wheatstone bridge configuration and mounted on the surface or body to be tested. Semiconductor sensors, for example crystalline silicon, can provide good strain sensitivity with significantly reduced sensor area and also reduced bridge power compared to metal resistor bridges. a-Si:H strain sensors fabricated on glass substrates have recently been demonstrated (G. de Cesare et al, Thin Solid Films, vol. 427, p. 191, 2003). We report here the first microcrystalline-silicon (μC-Si) strain sensors fabricated directly on flexible polyimide substrates with similar gage factor but very low power and higher yield compared to metallic strain sensor.
Keywords :
bridge circuits; condition monitoring; electric sensing devices; elemental semiconductors; piezoresistive devices; semiconductor device measurement; silicon; strain sensors; μC-Si strain sensors; Si; Wheatstone bridge configuration; a-Si:H strain sensors; bridge power; crystalline silicon; flexible polyimide substrates; gage factor; glass substrates; metal resistor bridges; metallic foil piezoresistors; polymeric substrate microcrystalline-silicon strain sensor; semiconductor piezoresistors; semiconductor sensors; sensor area; sensor power; sensor yield; shape monitoring applications; strain monitoring applications; strain sensitivity; strain sensors; Bridge circuits; Capacitive sensors; Crystallization; Monitoring; Piezoresistive devices; Polymers; Shape; Silicon; Substrates; Testing;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367805