Defect- and structure-weakness-localization on power semiconductors using OBIRCH (optical beam induced resistivity change)

OBIRCH has been shown to be a suitable instrument for failure- and weakness detection in power semiconductor devices, where emission microscopy (EMMI) is usually impossible due to the thick metal layers and high doping concentrations of the silicon (allowing no backside access). Since the current sensitivity performance of this method is outstanding, OBIRCH does not only detect the main leakage path, but additional/potential bypass paths or weaknesses, too. Thus, physical analysis may even be possible in those cases where the main leakage path does not allow further physical conclusions due to the critical structures being melted.