Novel structures enabling bulk switching in carbon nanotube FETs

In order to alleviate the disadvantages associated with Schottky barriers in CNFETs, it is necessary to design CNFETs with bulk switching properties meaning that the bulk portion of the nanotube rather than the interface controls the CNFET characteristics. Here we present the first self-aligned bulk-switched CNFET that operates in the enhancement mode with a p-i-p (or n-i-n) doping profile along the tube. With our novel approach, we successfully fabricated CNFETs with excellent switching (S∼63 mV/dec), the smallest value reported for CNFETs so far, and very good performance in terms of their drain-induced-barrier-lowering (DIBL)-like behavior.