DocumentCode :
2103783
Title :
Air-stable chemical doping of carbon nanotube transistors [CNFETs]
Author :
Chen, Jia ; Klinke, Christian ; Afzali, Ali ; Avouris, Phaedon
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2004
fDate :
21-23 June 2004
Firstpage :
137
Abstract :
In this paper, we have successfully demonstrated, for the first time, air-stable chemical p-doping of CNFETs via charge transfer; introduced tunability of the Vth, transformed scaled CNFETs from ambipolar to unipolar, improved Ion by 2-3 orders of magnitude, suppressed minority carrier injection (immunity from drain induced Ioff degradation from intrinsic Schottky barrier CNFET), yielding an excellent Ion/Ioff ratio of 106, and demonstrated excellent DIBL-like behavior.
Keywords :
Schottky barriers; carbon nanotubes; charge exchange; field effect transistors; minority carriers; nanotube devices; semiconductor doping; C; DIBL; Schottky barrier CNFET; air-stable chemical p-doping; ambipolar CNFET; carbon nanotube transistors; charge transfer; drain induced off-current degradation; minority carrier injection suppression; threshold voltage tunability; unipolar CNFET; CMOS process; CMOS technology; Carbon nanotubes; Charge carrier processes; Charge transfer; Chemicals; Doping profiles; FETs; Fabrication; Ion implantation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
ISSN :
1548-3770
Print_ISBN :
0-7803-8284-6
Type :
conf
DOI :
10.1109/DRC.2004.1367822
Filename :
1367822
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2103783
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