Title :
Flatten and invariant broadband spectra of transverse junction light- emitting diodes under a large range of bias current at 1.06 μm wavelengths
Author :
Guol, Shi-Hao ; Shi, Jin-Wei ; Chen, Yueh-Yi ; Wang, Jr-Hung ; Lin, Wei ; Yang, Ying-Jay ; Sun, Chi-Kuang
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
Transverse junction white-light light-emitting-diodes at 1.06 μm wavelengths with different p-type junction depths were employed to achieve similar and invariant broadband spectra under large range of bias currents due to uniform distribution carriers of in their multiple-quantum-wells.
Keywords :
light emitting diodes; semiconductor quantum wells; spectra; surface scattering; bias currents; flatten spectra; invariant broadband spectra; multiple quantum wells; p-type junction depths; transverse junction light- emitting diodes; uniform distribution carriers; white-light light- emitting-diodes; Bandwidth; Gallium arsenide; High speed optical techniques; Light emitting diodes; Optical devices; Optical films; Optical sensors; P-n junctions; Quantum dot lasers; Quantum well devices;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0924-2
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382542
