Title :
Modeling and ATLAS simulation studies on mid-infrared homojunction LED
Author :
Sanjeev ; Chakrabarti, P.
Author_Institution :
Dept. of Electron. & Instrum. Eng., MJP Rohilkhand Univ., Bareilly
Abstract :
In this paper, we present ATLAS simulation studies of a mid-infrared (MIR) PIN homo-junction light emitting diode (LED) based on p+-InAs0.91Sb0.09/n0-InAs0.91Sb0.09/ n+-InAs0.91Sb0.09 material system at room temperature. Various electro-optical properties of the LED have been modeled. The effect of high carrier injection has been evaluated on the output power of LED and theoretical findings found to be in good agreement with the reported experimental results.
Keywords :
III-V semiconductors; charge injection; indium compounds; light emitting diodes; p-i-n diodes; semiconductor device models; ATLAS simulation; InAs0.91Sb0.09; LED output power; PIN light emitting diode; carrier injection; midinfrared homojunction light emitting diode; temperature 293 K to 298 K; Electromagnetic wave absorption; Infrared detectors; Instruments; Light emitting diodes; Photonic band gap; Power generation; Radiative recombination; Semiconductor materials; Semiconductor process modeling; Temperature; ATLAS; Absorption Gas Spectroscopy; Light Emitting Diode; Mid-infrared; PIN Homojunction; Simulation;
Conference_Titel :
Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on
Conference_Location :
Varanasi
Print_ISBN :
978-0-230-63718-4
