Title :
Coherent transport of hole in p type semiconductive carbon nanotube
Author :
Kamimura, Taeko ; Hyon, C.K. ; Kojima, A. ; Maeda, M. ; Matsumoto, K.
Author_Institution :
ISIR, Osaka Univ., Japan
Abstract :
In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 μm at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance were measured. Results confirm the coexistence of the Coulomb charging effect and ballistic transport of the holes in semiconductive carbon nanotubes.
Keywords :
ballistic transport; carbon nanotubes; field effect transistors; hole mobility; nanotube devices; 4.5 micron; 8.6 K; C; Coulomb charging effect; Coulomb diamond characteristics; back gate type CNT field effect transistor; ballistic transport; carbon nanotubes; coherent hole transport; drain current-gate voltage characteristics; p type semiconductive CNT; periodic negative differential conductance; Ballistic transport; CNTFETs; Capacitance; Carbon nanotubes; Carrier confinement; Energy states; Potential well; Silicon; Substrates; Voltage;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367824
