Coherent transport of hole in p type semiconductive carbon nanotube

Author

Kamimura, Taeko ; Hyon, C.K. ; Kojima, A. ; Maeda, M. ; Matsumoto, K.

Author_Institution

ISIR, Osaka Univ., Japan

fYear

2004

fDate

21-23 June 2004

Firstpage

141

Abstract

In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 μm at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance were measured. Results confirm the coexistence of the Coulomb charging effect and ballistic transport of the holes in semiconductive carbon nanotubes.

Keywords

ballistic transport; carbon nanotubes; field effect transistors; hole mobility; nanotube devices; 4.5 micron; 8.6 K; C; Coulomb charging effect; Coulomb diamond characteristics; back gate type CNT field effect transistor; ballistic transport; carbon nanotubes; coherent hole transport; drain current-gate voltage characteristics; p type semiconductive CNT; periodic negative differential conductance; Ballistic transport; CNTFETs; Capacitance; Carbon nanotubes; Carrier confinement; Energy states; Potential well; Silicon; Substrates; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367824

Filename

1367824