Title :
A first report on the utility of the full width at half maximum of the photoluminescence spectrum from InxGa1−xN/GaN quantum wells
Author :
Das, Tapas ; Biswas, Dipankar ; Kabi, Sanjib
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata
Abstract :
Optical measurement on an InxGa1-xN/GaN QW may have several interpretations considering the different fundamental parameters for InxGa1-xN and InN, which are still uncertain. Quantum mechanical computations show that the line width or full width at half maximum (FWHM) of the PL spectra may be used to reduce ambiguities of interpretation.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InxGa1-xN-GaN; full width at half maximum; fundamental parameters; optical measurement; photoluminescence spectrum; quantum mechanical computations; quantum wells; Charge carrier processes; Electrons; Gallium nitride; Indium; Photoluminescence; Photonic band gap; Physics; Quantum computing; Quantum mechanics; Stimulated emission;
Conference_Titel :
Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on
Conference_Location :
Varanasi
Print_ISBN :
978-0-230-63718-4
