DocumentCode
2103893
Title
A first report on the utility of the full width at half maximum of the photoluminescence spectrum from Inx Ga1−x N/GaN quantum wells
Author
Das, Tapas ; Biswas, Dipankar ; Kabi, Sanjib
Author_Institution
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata
fYear
2008
fDate
22-24 Dec. 2008
Firstpage
283
Lastpage
285
Abstract
Optical measurement on an InxGa1-xN/GaN QW may have several interpretations considering the different fundamental parameters for InxGa1-xN and InN, which are still uncertain. Quantum mechanical computations show that the line width or full width at half maximum (FWHM) of the PL spectra may be used to reduce ambiguities of interpretation.
Keywords
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InxGa1-xN-GaN; full width at half maximum; fundamental parameters; optical measurement; photoluminescence spectrum; quantum mechanical computations; quantum wells; Charge carrier processes; Electrons; Gallium nitride; Indium; Photoluminescence; Photonic band gap; Physics; Quantum computing; Quantum mechanics; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on
Conference_Location
Varanasi
Print_ISBN
978-0-230-63718-4
Type
conf
Filename
5075719
Link To Document