• DocumentCode
    2103893
  • Title

    A first report on the utility of the full width at half maximum of the photoluminescence spectrum from InxGa1−xN/GaN quantum wells

  • Author

    Das, Tapas ; Biswas, Dipankar ; Kabi, Sanjib

  • Author_Institution
    Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata
  • fYear
    2008
  • fDate
    22-24 Dec. 2008
  • Firstpage
    283
  • Lastpage
    285
  • Abstract
    Optical measurement on an InxGa1-xN/GaN QW may have several interpretations considering the different fundamental parameters for InxGa1-xN and InN, which are still uncertain. Quantum mechanical computations show that the line width or full width at half maximum (FWHM) of the PL spectra may be used to reduce ambiguities of interpretation.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InxGa1-xN-GaN; full width at half maximum; fundamental parameters; optical measurement; photoluminescence spectrum; quantum mechanical computations; quantum wells; Charge carrier processes; Electrons; Gallium nitride; Indium; Photoluminescence; Photonic band gap; Physics; Quantum computing; Quantum mechanics; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Optoelectronic Materials and Devices, 2008. AOMD 2008. 2nd National Workshop on
  • Conference_Location
    Varanasi
  • Print_ISBN
    978-0-230-63718-4
  • Type

    conf

  • Filename
    5075719