Title :
Progress in quantum dots for nanophotonic devices
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Japan
Abstract :
Summary form only given. The use of strain to produce self-organized quantum dots has now become a well-accepted approach and is widely used in III-V semiconductors and other material systems. Much progress has been made in the area of growth - where the focus has been on size control, and optical characterization, where the goal has been the application to lasers and detectors. This paper describes the growth and optical properties of (in,Ga)As/(Ga,AI)As and InGaN/GaN quantum dots, and their application to nanophotonic devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; photodetectors; semiconductor lasers; semiconductor quantum dots; wide band gap semiconductors; III-V semiconductors; InAs-AlAs; InAs-GaAs; InGaAs-AlAs; InGaAs-AlGaAs; InGaAs-GaAs; InGaN-GaN; detectors; lasers; nanophotonic devices; optical characterization; self-organized quantum dots; size control; strain-induced quantum dots; Capacitive sensors; III-V semiconductor materials; Laser applications; Nanoscale devices; Optical control; Optical materials; Quantum dot lasers; Quantum dots; Quantum well lasers; Size control;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367832
