Multiple techniques approach failure analysis for a blocked p+ implant induced leakage in an ESD protection diode

In this paper, we present the multiple techniques analysis of a blocked p+ implant in a p⁺/N-well diode which forms the ESD protection of a pin. We will describe the leakage model and various observations that are made by advanced failure analysis tools. Since the pn junction forms one of the fundamental devices in realizing the MOSFET, the understanding of the characteristics of the malformed diode is crucial for predicting the effect of partially blocked source/drain implants for future failure analysis.