Title :
The role and suppression of carrier leakage in 1.5 μm GaInNAsSb/GaAs lasers
Author :
Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S.
Author_Institution :
Solid State & Photonics Lab, Stanford Univ., CA, USA
Abstract :
Recently, the first room temperature, continuous wave (CW), 1.49 μm GaAs-based lasers were demonstrated. The injection efficiency, ηinj, was quite low in these devices, ∼45%. Determining the origin of the low ηinj allows further improvements in device performance. The origin of the low ηinj is due to carrier leakage and nonradiative recombination. In this paper, several techniques are proposed to reduce this defect-enhanced electron leakage mechanism, including a novel asymmetric quantum well structure.
Keywords :
III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; leakage currents; quantum well lasers; wide band gap semiconductors; 1.49 micron; 1.5 micron; 45 percent; GaInNAsSb-GaAs; QW; asymmetric quantum well structure; carrier leakage suppression; defect-enhanced electron leakage mechanism; injection efficiency; nonradiative recombination; room temperature continuous wave lasers; semiconductor lasers; Electrons; Gallium arsenide; Laser theory; Nitrogen; Optical sensors; Power generation; Radiative recombination; Solid lasers; Temperature dependence; Temperature sensors;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367835
