The role and suppression of carrier leakage in 1.5 μm GaInNAsSb/GaAs lasers

Author

Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S.

Author_Institution

Solid State & Photonics Lab, Stanford Univ., CA, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

158

Abstract

Recently, the first room temperature, continuous wave (CW), 1.49 μm GaAs-based lasers were demonstrated. The injection efficiency, η_inj, was quite low in these devices, ∼45%. Determining the origin of the low η_inj allows further improvements in device performance. The origin of the low η_inj is due to carrier leakage and nonradiative recombination. In this paper, several techniques are proposed to reduce this defect-enhanced electron leakage mechanism, including a novel asymmetric quantum well structure.

Keywords

III-V semiconductors; electron-hole recombination; gallium compounds; indium compounds; leakage currents; quantum well lasers; wide band gap semiconductors; 1.49 micron; 1.5 micron; 45 percent; GaInNAsSb-GaAs; QW; asymmetric quantum well structure; carrier leakage suppression; defect-enhanced electron leakage mechanism; injection efficiency; nonradiative recombination; room temperature continuous wave lasers; semiconductor lasers; Electrons; Gallium arsenide; Laser theory; Nitrogen; Optical sensors; Power generation; Radiative recombination; Solid lasers; Temperature dependence; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367835

Filename

1367835