Electron Y-branch switches

Author

Worschech, L. ; Hartmann, D. ; Reitzenstein, S. ; Forchel, A.

Author_Institution

Technische Phys., Wurzburg Univ., Germany

fYear

2004

fDate

21-23 June 2004

Firstpage

165

Abstract

An electron Y-branch switch (YBS) consists of a narrow stem (source) which splits along a branching section into two branches (drains). In this paper, we describe the logic operation of a cascaded YBS with switching lengths in the order of 100 nm and smaller. By means of electron beam lithography, we have fabricated a YBS in a GaAs/AlGaAs heterostructure. Presented is an overview of the functionality of YBSs exploited as nanoelectronic amplifiers, rectifiers and logic gates. We describe the transfer characteristics of two cascaded YBSs and demonstrated logic AND/NAND gate operation with a bistable output.

Keywords

amplifiers; circuit bistability; electron beam lithography; logic gates; nanoelectronics; semiconductor heterojunctions; semiconductor switches; solid-state rectifiers; 100 nm; AND gates; GaAs-AlGaAs; NAND gates; YBS heterostructure; bistable output logic gates; cascaded YBS; electron Y-branch switches; electron beam lithography; nanoelectronic amplifiers; narrow stem source; rectifiers; split branching section drains; Electron beams; Electron mobility; Electronic circuits; Hysteresis; Scanning electron microscopy; Scattering; Schottky diodes; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367840

Filename

1367840