DocumentCode :
2104172
Title :
Electron Y-branch switches
Author :
Worschech, L. ; Hartmann, D. ; Reitzenstein, S. ; Forchel, A.
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
fYear :
2004
fDate :
21-23 June 2004
Firstpage :
165
Abstract :
An electron Y-branch switch (YBS) consists of a narrow stem (source) which splits along a branching section into two branches (drains). In this paper, we describe the logic operation of a cascaded YBS with switching lengths in the order of 100 nm and smaller. By means of electron beam lithography, we have fabricated a YBS in a GaAs/AlGaAs heterostructure. Presented is an overview of the functionality of YBSs exploited as nanoelectronic amplifiers, rectifiers and logic gates. We describe the transfer characteristics of two cascaded YBSs and demonstrated logic AND/NAND gate operation with a bistable output.
Keywords :
amplifiers; circuit bistability; electron beam lithography; logic gates; nanoelectronics; semiconductor heterojunctions; semiconductor switches; solid-state rectifiers; 100 nm; AND gates; GaAs-AlGaAs; NAND gates; YBS heterostructure; bistable output logic gates; cascaded YBS; electron Y-branch switches; electron beam lithography; nanoelectronic amplifiers; narrow stem source; rectifiers; split branching section drains; Electron beams; Electron mobility; Electronic circuits; Hysteresis; Scanning electron microscopy; Scattering; Schottky diodes; Switches; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
ISSN :
1548-3770
Print_ISBN :
0-7803-8284-6
Type :
conf
DOI :
10.1109/DRC.2004.1367840
Filename :
1367840
Link To Document :
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