Title :
Optical manipulation of magnetism in III-V-based ferromagnetic semiconductors and its device application
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
In the last decade, the study of physics and application of spin-related phenomena has become one of the important emerging fields born from the advanced studies of both semiconductors and magnetic materials. This presentation reviews a few examples of such activities that are taking place around the world. This is followed by the experimental results concerning the optical manipulation of magnetism in (III,Mn)V ferromagnetic semiconductors. Finally, a polarized light detector is discussed and its potential application with a spin LED. Partial magnetization reversal by the electrical injection of hole spins is also reviewed on the basis of results obtained from (Ga,Mn)As-based magnetic tunnel junctions.
Keywords :
III-V semiconductors; ferromagnetic materials; gallium arsenide; light polarisation; magnetic tunnelling; magnetisation reversal; magneto-optical devices; magnetoelectronics; manganese compounds; photodetectors; spin polarised transport; GaAs; III-V-based ferromagnetic semiconductors; MnAs; hole spin electrical injection; magnetic tunnel junctions; magnetism optical manipulation; partial magnetization reversal; polarized light detector; spin LED; spin-related phenomena; Giant magnetoresistance; Light emitting diodes; Magnetic devices; Magnetic semiconductors; Magnetic tunneling; Optical devices; Optical polarization; Optical saturation; Quantum computing; Saturation magnetization;
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Conference_Location :
Notre Dame, IN, USA
Print_ISBN :
0-7803-8284-6
DOI :
10.1109/DRC.2004.1367841
