DocumentCode
2104321
Title
V-band MMIC mixers using AIGaAs/InGaAs/GaAs PM HFET
Author
Kolanowski, C. ; Allam, R. ; De Jaeger, J.C. ; Bourne-Yaonaba, P. ; Douriens, C. ; Favre, J
Author_Institution
I.E.M.N. - U.M.R. C.N.R.S. 9929, Département Hyperfréquences et Semiconducteurs Avenue Poincaré, B.P. 69 - 59652 VILLENEUVE D´´ASCQ CEDEX - FRANCE
Volume
1
fYear
1995
fDate
4-4 Sept. 1995
Firstpage
299
Lastpage
303
Abstract
MMIC single gate cold mixers and dual gate mixers have been developed, fabricated and measured in V band. These MMIC microstrip mixers have been processed on 0.15 ¿m or 0.25 ¿m gate AIGaAs/InGaAs/GaAs PM-HFET technology. Specific non linear electrical models of single gate and dual gate transitors have been performed. A comparison of the performance for each MMIC is described. The SG cold mixer shows a conversion gain close to ¿7.5 dB and a compression power point beyond 11 dBm input power. The DG mixer exhibits a conversion gain of ¿3 dB and a LO to RF natural isolation larger than 30 dB. A back simulation has been made showing a good agreement between these experiment results and the non linear simulations.
Keywords
Circuits; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; MODFETs; Millimeter wave technology; Pulse measurements; RF signals; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1995. 25th European
Conference_Location
Bologna, Italy
Type
conf
DOI
10.1109/EUMA.1995.336966
Filename
4137179
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