A low-temperature Si/SiGe impact diode for improved infrared sensing

Author

Meteer, Jami A. ; Eikenberry, S.S. ; Huffman, James E. ; Kan, Edwin C.

Author_Institution

Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA

fYear

2004

fDate

21-23 June 2004

Firstpage

177

Abstract

Si/SiGe quantum well (QW) impact diodes are demonstrated with multiplication up to 200 at 10 V reverse bias between 10-150 K. These diodes are ideal gain structures for use with Si impurity band conduction (IBC) infrared detectors, due to the available integration platform, appropriate low temperature characteristics, low voltage operation, and low noise multiplication mechanism as required for compatibility with mid- and far infrared detection. Physical characterization, including composition and doping profiles, are obtained from STEM and SIMS analyses. Photocurrent multiplication is measured to confirm our device design.

Keywords

Ge-Si alloys; doping profiles; elemental semiconductors; infrared detectors; low-power electronics; photoconductivity; photodiodes; quantum well devices; scanning-transmission electron microscopy; secondary ion mass spectroscopy; semiconductor materials; 10 V; 10 to 150 K; IBC infrared detectors; QW diode; SIMS; STEM; Si-SiGe; doping profiles; far-IR detection; ideal gain structures; impurity band conduction; infrared sensing; low noise multiplication mechanism; low voltage operation; low-temperature impact diode; mid-IR detection; photocurrent multiplication; quantum well impact diodes; Astronomy; Electrons; Germanium silicon alloys; Infrared detectors; P-i-n diodes; Photoconductivity; Semiconductor device noise; Semiconductor diodes; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

ISSN

1548-3770

Print_ISBN

0-7803-8284-6

Type

conf

DOI

10.1109/DRC.2004.1367847

Filename

1367847