DocumentCode
2104354
Title
A process technique to engineer the stress of thick doped polysilicon films for MEMS applications
Author
Agarwal, A. ; Nagarajan, R. ; Singh, J.
Author_Institution
Inst. of Microelectron., Singapore, Singapore
fYear
2002
fDate
2002
Firstpage
207
Lastpage
211
Abstract
It is shown that the LPCVD deposition technique and annealing of polysilicon effect the mechanical properties of the released structures, for micromachined sensors. Tensile residual stress is often required for a stable polysilicon MEMS structure after final release process.
Keywords
CVD coatings; annealing; elemental semiconductors; internal stresses; micromachining; microsensors; semiconductor thin films; silicon; LPCVD; MEMS structure; Si; annealing; doped polysilicon film; mechanical properties; micromachined sensor; release process; stress engineering; Annealing; Electrical resistance measurement; Microelectromechanical devices; Micromechanical devices; Residual stresses; Silicon; Stress measurement; Temperature; Tensile stress; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN
0-7803-7416-9
Type
conf
DOI
10.1109/IPFA.2002.1025663
Filename
1025663
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