Title :
A process technique to engineer the stress of thick doped polysilicon films for MEMS applications
Author :
Agarwal, A. ; Nagarajan, R. ; Singh, J.
Author_Institution :
Inst. of Microelectron., Singapore, Singapore
Abstract :
It is shown that the LPCVD deposition technique and annealing of polysilicon effect the mechanical properties of the released structures, for micromachined sensors. Tensile residual stress is often required for a stable polysilicon MEMS structure after final release process.
Keywords :
CVD coatings; annealing; elemental semiconductors; internal stresses; micromachining; microsensors; semiconductor thin films; silicon; LPCVD; MEMS structure; Si; annealing; doped polysilicon film; mechanical properties; micromachined sensor; release process; stress engineering; Annealing; Electrical resistance measurement; Microelectromechanical devices; Micromechanical devices; Residual stresses; Silicon; Stress measurement; Temperature; Tensile stress; Wavelength measurement;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025663
