Impact of oxide degradation on universal mobility behaviour of n-MOS inversion layers

Author

Manhas, S.K. ; De Souza, M.M. ; Oates, A.S. ; Chen, Y.

Author_Institution

Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK

fYear

2002

fDate

2002

Firstpage

227

Lastpage

231

Abstract

The effect of oxide damage on the electron mobility in n-channel inversion layers is studied. It is observed that as a result of stress, the universal mobility model becomes interface charge dependent. The effect of interface damage, attributed to Coulomb scattering in the region of strong inversion, can be described by a change in universal model parameters with interface charge (N_it). An N_it-dependent model is presented which can be easily assimilated in simulation tools by circuit designers to accurately predict impact of device degradation on performance.

Keywords

MOSFET; electron mobility; interface states; inversion layers; semiconductor device models; Coulomb scattering; device degradation; electron mobility; interface charge; n-MOSFET inversion layer; oxide damage; stress; universal model; Circuit simulation; Degradation; Interface states; Predictive models; Pulse measurements; Scattering; Semiconductor device modeling; Stress; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the

Print_ISBN

0-7803-7416-9

Type

conf

DOI

10.1109/IPFA.2002.1025668

Filename

1025668