DocumentCode
2104505
Title
Plasma charging damage to gate dielectric-past, present and future
Author
Cheung, Kin P.
Author_Institution
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fYear
2002
fDate
2002
Firstpage
237
Lastpage
241
Abstract
Plasma charging damage to thin gate dielectric evolves with the integrated circuit technology. As gate dielectric thins down, its sensitivity to electrical stress changes, so are the impacts of such stress on device and circuit reliability. Concurrent to that change, is the change in plasma systems used in production. The convolution of the two determines the seriousness of plasma charging damage, as well as its methods of characterization. As the industry poise to make yet another major change, namely to high-k gate dielectric, the problem of plasma charging damage will have to be treated differently again.
Keywords
CMOS integrated circuits; MOSFET; dielectric thin films; integrated circuit reliability; plasma materials processing; semiconductor device breakdown; semiconductor-insulator boundaries; surface charging; IC technology; characterization methods; circuit reliability; electrical stress sensitivity; gate-oxide thickness effect; high-k gate dielectric; plasma charging damage; plasma systems; thin gate dielectric; Breakdown voltage; Circuits; Dielectrics; Electric breakdown; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN
0-7803-7416-9
Type
conf
DOI
10.1109/IPFA.2002.1025670
Filename
1025670
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