DocumentCode :
2104505
Title :
Plasma charging damage to gate dielectric-past, present and future
Author :
Cheung, Kin P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fYear :
2002
fDate :
2002
Firstpage :
237
Lastpage :
241
Abstract :
Plasma charging damage to thin gate dielectric evolves with the integrated circuit technology. As gate dielectric thins down, its sensitivity to electrical stress changes, so are the impacts of such stress on device and circuit reliability. Concurrent to that change, is the change in plasma systems used in production. The convolution of the two determines the seriousness of plasma charging damage, as well as its methods of characterization. As the industry poise to make yet another major change, namely to high-k gate dielectric, the problem of plasma charging damage will have to be treated differently again.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; integrated circuit reliability; plasma materials processing; semiconductor device breakdown; semiconductor-insulator boundaries; surface charging; IC technology; characterization methods; circuit reliability; electrical stress sensitivity; gate-oxide thickness effect; high-k gate dielectric; plasma charging damage; plasma systems; thin gate dielectric; Breakdown voltage; Circuits; Dielectrics; Electric breakdown; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
Type :
conf
DOI :
10.1109/IPFA.2002.1025670
Filename :
1025670
Link To Document :
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