Title :
Next Generation Infrared Sensors: Enhanced Pixel Functionality Using Nanoscale Physics
Author_Institution :
Univ. of New Mexico, Albuquerque
Abstract :
This presentation will be focused on the fabrication of focal plane arrays using two material systems which are emerging as promising technologies for mid infrared sensors. These are (1) InAs/InGaAs self assembled quantum dots in well (DWELL) detectors (2) InAs/(In,Ga)Sb strain layer superlattices (SLS) detectors.The growth issues (group V exchange and the interface chemistry) and the structural and optical characterization techniques will be discussed.
Keywords :
III-V semiconductors; focal planes; gallium arsenide; indium compounds; infrared detectors; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; enhanced pixel functionality; focal plane arrays; growth issues; interface chemistry; mid infrared sensors; nanoscale physics; next generation infrared sensors; optical characterization; self assembled quantum dots in well detectors; strain layer superlattices detectors; structural characterization; Capacitive sensors; Chemical technology; Fabrication; Indium gallium arsenide; Infrared sensors; Optical materials; Physics; Quantum dots; Self-assembly; Sensor arrays;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382572
