Title :
Suppressed Surface Leakage Current Using nBn Infrared Detector Based on Type II InAs/GaSb Strain Layer Superlattices
Author :
Kim, H.S. ; Bishop, G.D. ; Rodriguez, J.B. ; Sharma, Y.D. ; Plis, E. ; Dawson, L.R. ; Krishna, S.
Author_Institution :
Univ. of New Mexico, Albuquerque
Abstract :
We present a SLS-based nBn infrared detector which suppresses the surface leakage current without using any passivation technique. The dark current density is reduced by an order of magnitude at 77 K compared with a conventional mesa etched device.
Keywords :
III-V semiconductors; dark conductivity; gallium compounds; indium compounds; infrared detectors; semiconductor superlattices; InAs-GaSb; dark current density; mesa etched device; nBn infrared detector; surface leakage current; type II InAs/GaSb strain layer superlattices; Capacitive sensors; Dark current; Infrared detectors; Laser sintering; Leakage current; Multilevel systems; Passivation; Photodetectors; Superlattices; Wet etching;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0925-9
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382573
