DocumentCode
2104552
Title
Improvements in on-wafer load pull measurements
Author
Gao, Y. ; Köther, D. ; Roth, B. ; Sporkmann, Th ; Wolff, I.
Author_Institution
Institut fÿr Mobil- und Satellitenfunktechnik, Carl-Friedrich-GauÃ\x9f StraÃ\x9fe 2, 47475 Kamp-Lintfort, Fax: #492842-981299, Phone: #492842-981200
Volume
1
fYear
1995
fDate
4-4 Sept. 1995
Firstpage
334
Lastpage
338
Abstract
This paper describes new results in the field of On-Wafer Load Pull measurements. While the applied system may be of any (vectorized) kind, the focus of this work is on the post processing of the data. New results of measurement interactions are shown and a procedure for simultaneously achieving accurate results for the contours of PAE, gain, output power and other parameters is given. Measurements and results of this kind can come from stable as well as from ,,unstable" impedance regions. A discussion on measurements of Power Added Efficiency (PAE) is conducted. The comprehensive characterisation of a device/circuit takes about one day. Gain and output power contours, achieved from HEMT measurements, are shown for 9 GHz.
Keywords
Calibration; Circuits; Coaxial components; Frequency measurement; Gain measurement; HEMTs; Impedance measurement; Power generation; Power measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1995. 25th European
Conference_Location
Bologna, Italy
Type
conf
DOI
10.1109/EUMA.1995.336974
Filename
4137187
Link To Document