Improvements in on-wafer load pull measurements

This paper describes new results in the field of On-Wafer Load Pull measurements. While the applied system may be of any (vectorized) kind, the focus of this work is on the post processing of the data. New results of measurement interactions are shown and a procedure for simultaneously achieving accurate results for the contours of PAE, gain, output power and other parameters is given. Measurements and results of this kind can come from stable as well as from ,,unstable" impedance regions. A discussion on measurements of Power Added Efficiency (PAE) is conducted. The comprehensive characterisation of a device/circuit takes about one day. Gain and output power contours, achieved from HEMT measurements, are shown for 9 GHz.