Title :
Characterization of ultrathin plasma nitrided gate dielectrics in pMOSFET for 0.18 μm technology and beyond
Author :
Tan, S.S. ; Ang, C.H. ; Lek, C.M. ; Chen, T.P. ; Cho, B.J. ; See, Alex ; Chan, Lap
Author_Institution :
Dept. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
The impact of nitrogen plasma nitridation on the interfacial quality of ultrathin oxide (1.8 nm and 2.6 nm) and negative bias temperature instability (NBTI) have been investigated. It is found that the plasma-nitridation can more effectively suppress nitrogen-induced and boron-induced hole mobility degradation than that of thermal nitridation. Therefore, a higher amount of nitrogen can be incorporated into the plasma-nitrided oxide to suppress boron penetration without compromising the oxide interfacial quality. Furthermore, plasma-nitrided oxides have higher resistance to NBTI and longer NBTI-lifetime than that of thermal-nitrided oxides.
Keywords :
CMOS integrated circuits; MOSFET; boron; dielectric thin films; hole mobility; interface states; nitridation; plasma materials processing; semiconductor-insulator boundaries; stability; 0.18 micron; 1.8 nm; 2.6 nm; B penetration suppression; B-induced hole mobility degradation; N; N plasma nitridation; N-induced hole mobility degradation; NBTI-lifetime; Si:B-SiON; interface trap generation suppression; interfacial quality; negative bias temperature instability; p-channel MOSFET; pMOSFET; plasma-nitrided oxide; ultrathin oxide; ultrathin plasma nitrided gate dielectrics; Boron; Dielectrics; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Nitrogen; Plasma temperature; Thermal degradation; Thermal resistance; Titanium compounds;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2002. IPFA 2002. Proceedings of the 9th International Symposium on the
Print_ISBN :
0-7803-7416-9
DOI :
10.1109/IPFA.2002.1025674
