DocumentCode :
2105073
Title :
Digital lithography for thin-film transistor fabrication
Author :
Wong, W.S. ; Lujan, R. ; Ready, S.E. ; Chabinyc, M.L. ; Arias, A.C. ; Street, R.A.
Author_Institution :
Palo Alto Res. Center, CA, USA
fYear :
2004
fDate :
21-23 June 2004
Firstpage :
225
Abstract :
This work presents a novel digital-lithographic method, in which an electronically generated and digitally aligned etch mask is jet-printed onto a process surface. This method was used to fabricate hydrogenated amorphous silicon thin-film transistor (TFT) arrays. The digital lithographically fabricated arrays had features as small a 40 μm with 5 μm layer-to-layer registration and pixel resolution of 75 dpi over a four-inch diameter wafer. The resulting TFTs, with on/off ratios of 108 and threshold voltages of 2-3 V were then integrated with a-Si sensor media for an image sensor. The image sensor was operated as an X-ray and light detector.
Keywords :
amorphous semiconductors; elemental semiconductors; image sensors; lithography; masks; silicon; thin film transistors; 2 to 3 V; 4 inch; 40 micron; 5 micron; Si; X-ray detector; a-Si sensor media; digital lithography; digital-lithographic method; digitally aligned etch mask; electronically generated etch mask; feature size; hydrogenated amorphous silicon TFT arrays; image sensor; jet-printed process surface; layer-to-layer registration; light detector; on/off ratios; pixel resolution; thin-film transistor fabrication; threshold voltage; Amorphous silicon; Etching; Fabrication; Image sensors; Lithography; Thin film transistors; Threshold voltage; X-ray detection; X-ray detectors; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]
Conference_Location :
Notre Dame, IN, USA
ISSN :
1548-3770
Print_ISBN :
0-7803-8284-6
Type :
conf
DOI :
10.1109/DRC.2004.1367877
Filename :
1367877
Link To Document :
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