DocumentCode
2105097
Title
2.33-μm-wavelength InAs/InGaAs MQW DFB lasers grown by MOVPE
Author
Sato, T. ; Mitsuhara, M. ; Nunoya, N. ; Kasaya, K. ; Kano, F. ; Takeshita, T. ; Kondo, Y.
Author_Institution
NTT Corp., Atsugi
fYear
2007
fDate
21-25 Oct. 2007
Firstpage
697
Lastpage
698
Abstract
Single-mode CW operation at a wavelength of 2.33 μm was achieved with InAs/InGaAs MQW DFB lasers grown by MOVPE. An output power of more than 10 mW and high temperature operation up to 85°C were also confirmed.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum wells; vapour phase epitaxial growth; InAs-GaAs; MOVPE; MQW DFB lasers; single-mode CW operation; wavelength 2.33 micron; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Photonic band gap; Power generation; Quantum well devices; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location
Lake Buena Vista, FL
ISSN
1092-8081
Print_ISBN
978-1-4244-0924-2
Electronic_ISBN
1092-8081
Type
conf
DOI
10.1109/LEOS.2007.4382598
Filename
4382598
Link To Document