Title :
2.33-μm-wavelength InAs/InGaAs MQW DFB lasers grown by MOVPE
Author :
Sato, T. ; Mitsuhara, M. ; Nunoya, N. ; Kasaya, K. ; Kano, F. ; Takeshita, T. ; Kondo, Y.
Author_Institution :
NTT Corp., Atsugi
Abstract :
Single-mode CW operation at a wavelength of 2.33 μm was achieved with InAs/InGaAs MQW DFB lasers grown by MOVPE. An output power of more than 10 mW and high temperature operation up to 85°C were also confirmed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum wells; vapour phase epitaxial growth; InAs-GaAs; MOVPE; MQW DFB lasers; single-mode CW operation; wavelength 2.33 micron; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Photonic band gap; Power generation; Quantum well devices; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2007. LEOS 2007. The 20th Annual Meeting of the IEEE
Conference_Location :
Lake Buena Vista, FL
Print_ISBN :
978-1-4244-0924-2
Electronic_ISBN :
1092-8081
DOI :
10.1109/LEOS.2007.4382598
