DocumentCode
2105117
Title
CFD Study on Polycrystalline Silicon Chemical Vapor Deposition in a Rib Reactor
Author
Zhang, Pan ; Wang, Wei Wen ; Wu, Yu Lei ; Chen, Guang Hui ; Li, Jian Long
Author_Institution
Coll. of Electronmechanical Eng., QUST, Qingdao, China
fYear
2010
fDate
28-31 March 2010
Firstpage
1
Lastpage
4
Abstract
In this study, the numerical investigation was adopted to analyze the deposition characteristic of polycrystalline silicon in a rib reactor. Fluent 6.2 was utilized to simulate the simultaneous momentum transfer, energy transfer and mass transfer, and to couple the gas-phase reaction with surface reaction in SiHC13 -H2 system. Computed flow structure, thermal and species distributions indicated that the deposition rate of polycrystalline silicon is higher but the uniformity of polycrystalline silicon and of the heat transfer are worse in the rib reactor than in a flat reactor.
Keywords
chemical vapour deposition; computational fluid dynamics; elemental semiconductors; heat transfer; mass transfer; semiconductor growth; semiconductor thin films; silicon; surface chemistry; CFD; Si; chemical vapor deposition; computed flow structure; energy transfer; gas-phase reaction; heat transfer; mass transfer; polycrystalline silicon; rib reactor; simultaneous momentum transfer; species distributions; surface reaction; thermal distributions; Chemical vapor deposition; Computational fluid dynamics; Computational modeling; Equations; Fluid flow; Inductors; Plasma chemistry; Silicon; Solid modeling; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Power and Energy Engineering Conference (APPEEC), 2010 Asia-Pacific
Conference_Location
Chengdu
Print_ISBN
978-1-4244-4812-8
Electronic_ISBN
978-1-4244-4813-5
Type
conf
DOI
10.1109/APPEEC.2010.5448901
Filename
5448901
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