• DocumentCode
    2105117
  • Title

    CFD Study on Polycrystalline Silicon Chemical Vapor Deposition in a Rib Reactor

  • Author

    Zhang, Pan ; Wang, Wei Wen ; Wu, Yu Lei ; Chen, Guang Hui ; Li, Jian Long

  • Author_Institution
    Coll. of Electronmechanical Eng., QUST, Qingdao, China
  • fYear
    2010
  • fDate
    28-31 March 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this study, the numerical investigation was adopted to analyze the deposition characteristic of polycrystalline silicon in a rib reactor. Fluent 6.2 was utilized to simulate the simultaneous momentum transfer, energy transfer and mass transfer, and to couple the gas-phase reaction with surface reaction in SiHC13 -H2 system. Computed flow structure, thermal and species distributions indicated that the deposition rate of polycrystalline silicon is higher but the uniformity of polycrystalline silicon and of the heat transfer are worse in the rib reactor than in a flat reactor.
  • Keywords
    chemical vapour deposition; computational fluid dynamics; elemental semiconductors; heat transfer; mass transfer; semiconductor growth; semiconductor thin films; silicon; surface chemistry; CFD; Si; chemical vapor deposition; computed flow structure; energy transfer; gas-phase reaction; heat transfer; mass transfer; polycrystalline silicon; rib reactor; simultaneous momentum transfer; species distributions; surface reaction; thermal distributions; Chemical vapor deposition; Computational fluid dynamics; Computational modeling; Equations; Fluid flow; Inductors; Plasma chemistry; Silicon; Solid modeling; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power and Energy Engineering Conference (APPEEC), 2010 Asia-Pacific
  • Conference_Location
    Chengdu
  • Print_ISBN
    978-1-4244-4812-8
  • Electronic_ISBN
    978-1-4244-4813-5
  • Type

    conf

  • DOI
    10.1109/APPEEC.2010.5448901
  • Filename
    5448901