Title :
A 2.4GHz to 6GHz active balun in GaN technology
Author :
Dupuy, Victor ; Kerherve, Eric ; Deltimple, Nathalie ; Mallet-Guy, Benoit ; Mancuso, Y. ; Garrec, P.
Author_Institution :
IMS Lab., Talence, France
Abstract :
This article presents a S-C band active balun in a GaN integrated technology. Based on a differential pair this circuit realizes the single to differential conversion. Moreover this circuit can be used as preamplifier to drive a power stage. It delivers more than 25dBm in each differential path in the [2,4GHz-6GHz] band with a maximum of 29dBm at 3.8GHz. The chip has been realized in the UMS GH25 process, a GaN HEMT technology with a 0.25μm gate length.
Keywords :
III-V semiconductors; baluns; gallium compounds; high electron mobility transistors; microwave integrated circuits; preamplifiers; wide band gap semiconductors; GaN; HEMT technology; S-C band active balun; UMS GH25 process; frequency 2.4 GHz to 6 GHz; integrated technology; power stage; single-differential conversion; size 0.25 mum; Gallium nitride; Impedance matching; Inductors; Logic gates; Power amplifiers; Power generation; Transistors;
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2013 IEEE 20th International Conference on
Conference_Location :
Abu Dhabi
DOI :
10.1109/ICECS.2013.6815495
