DocumentCode :
2105402
Title :
SPICE implementation of double barrier resonant tunnel diode model
Author :
Neculoiu, Dan ; Tebeanu, Teodor
Author_Institution :
Politehnic Univ. of Bucharest, Romania
Volume :
1
fYear :
1996
fDate :
9-12 Oct 1996
Firstpage :
181
Abstract :
A new Double Barrier Resonant Tunnel diode large-signal model suitable for SPICE simulation is presented in this paper. The model is based on the device I/V characteristic and can be successfully applied to simulating microwave applications such as oscillators, self-oscillating mixers, frequency multipliers, etc. The associated parameters required in this new model can be easily extracted from measured I/V curves
Keywords :
SPICE; circuit analysis computing; microwave circuits; microwave diodes; resonant tunnelling diodes; semiconductor device models; SPICE simulation; device I/V characteristic; double barrier resonant tunnel diode; frequency multipliers; large-signal model; measured I/V curves; microwave applications; self-oscillating mixers; Circuit simulation; Frequency; Light emitting diodes; Microwave circuits; Physics; Resonant tunneling devices; SPICE; Shape; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
Type :
conf
DOI :
10.1109/SMICND.1996.557334
Filename :
557334
Link To Document :
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