• DocumentCode
    2105678
  • Title

    Modelling and optimising the SOI MOSFET in view of MMIC applications

  • Author

    Gillon, Renaud ; Raskin, J.P. ; Vanhoenacker, D. ; Colinge, J.P.

  • Author_Institution
    Université catholique de Louvain, Laboratoire de Microélectronique, bâtiment Maxwell, place du Levant, 3 B-1 348 Louvain-la-Neuve, Belgium. Fax: +32-10-47.87.05
  • Volume
    1
  • fYear
    1995
  • fDate
    4-4 Sept. 1995
  • Firstpage
    543
  • Lastpage
    547
  • Abstract
    A small-signal model based on technological parameters is validated by measurements for thin-film fully-depleted silicon-on-insulator nMOSFETs. The model is used to evaluate the impact of technological improvements and to guide the performance optimisation of the device. It is shown that the SOI nMOSFET can be expected to perform suffciently well so as to be eligible for MMIC applications up to 10 GHz.
  • Keywords
    Conductivity; Equivalent circuits; Insulation; MMICs; MOSFET circuits; Microwave devices; Parasitic capacitance; Silicidation; Silicon on insulator technology; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1995. 25th European
  • Conference_Location
    Bologna, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1995.337018
  • Filename
    4137231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2105678