DocumentCode
2105748
Title
An iterative parasitic extraction method for HEMT
Author
Kim, Byung-Sung ; Nam, Sangwook
Author_Institution
Dept. of Electronics Eng., Seoul National University San 56-1, Shinlim-dong, Kwanak-gu, Seoul, 151-742, Korea
Volume
1
fYear
1995
fDate
4-4 Sept. 1995
Firstpage
558
Lastpage
561
Abstract
The parasitic elements for HEMTs are extracted using an iterative technique based on the exact solution of the channel transmission equation. The proposed method uses two-point S-parameter measurements under pinched FET and normal operating gate bias conditions without hot bias measurements. Convergence is stable and the results are reliable.
Keywords
Admittance; Electrical resistance measurement; Equations; FETs; HEMTs; Impedance; Iterative methods; MESFETs; Parasitic capacitance; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1995. 25th European
Conference_Location
Bologna, Italy
Type
conf
DOI
10.1109/EUMA.1995.337021
Filename
4137234
Link To Document