Power loss comparison in two- and three-level PWM converters

Author

Alemi, Payam ; Lee, Dong-Choon

Author_Institution

Dept. of Electr. Eng., Yeungnam Univ., Gyeongsan, South Korea

fYear

2011

fDate

May 30 2011-June 3 2011

Firstpage

1452

Lastpage

1457

Abstract

This paper presents a fair comparison of power losses in two-level and NPC three-level PWM converters using different switching devices. Conduction losses for IGBT and diode are calculated as a function of modulation index and power factor. Switching losses are calculated as a function of the switching frequency. Three level converters give a lower total power loss compared with two-level converters. Cost comparison has shown the two level configuration is about 25% cheaper than the three level configuration.

Keywords

PWM power convertors; insulated gate bipolar transistors; power factor; power semiconductor diodes; switching convertors; IGBT; NPC three-level PWM converters; conduction loss; modulation index; power factor; power loss comparison; switching devices; switching frequency; switching loss; two-level PWM converters; Insulated gate bipolar transistors; Modulation; Reactive power; Semiconductor diodes; Switches; Switching frequency; Switching loss; Conduction loss; PWM; switching loss; three-level converters;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on

Conference_Location

Jeju

ISSN

2150-6078

Print_ISBN

978-1-61284-958-4

Electronic_ISBN

2150-6078

Type

conf

DOI

10.1109/ICPE.2011.5944455

Filename

5944455